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02015-DSH-001-G mindspeed technologies ? august 2007 mindspeed proprietary and confidential the m02015 is a cmos transimpedance amplifier with ag c. the agc gives a wide dynamic range of 32 db. the high transimpedance gain of 9 k ? ensures good sensitivity. for optimum system performance, the m02015 die should be mounted with a gaas or ingaas pin photodetector inside a lensed to-can or other optical sub-assembly. the m02015 can either bias the pin diode from the internal regulator or use an externally biased pin diode. a replica of the average photodiode current is available at the mon pad for photo-alignment and receive power monitoring (sff-8472 compliant). applications ? 2x fiber channel gpon pci express atm/sonet infiniband features typical -26.2 dbm se nsitivity, +6 dbm satu ration at 2.125 gbps, -26 dbm at 2.5 gbps, when used with 0.9 a/w ingaas pin typical differential transimpedance: 9 k ? fabricated in standard cmos differential output standard +3.3 volt supply available in die form only monitor output (sff-8472 compliant) agc provides dynamic range of 32 db internal or external bias for photodiode usable with a pin or apd photodiode same pad layout and di e size as m02011/13/14/16 typical applications diagram typically ac-coupled to limiting amplifier limiting amplifier pina dout doutb v cc pink 1 nf m02015 470 pf rm mon v cc gnd tia bond pad to can lead m02015 low power cmos transimpedance amplifier with rx pwr mon output and agc for fiber optic networks up to 2.5 gbps
02015-DSH-001-G mindspeed technologies ? ii mindspeed proprietary and confidential ordering information part number package operating temperature m02015-xx* waffle pack ?40 c to 95 c m02015-xx* expanded whole wafer on a ring ?40 c to 95 c * refer to mindspeed sales or www.mindspeed.com for additional ordering details and information. revision history revision level date asic revision description g release august 2007 -11 corrected pina, agc, and dout absolute maximum voltage in table 1-1 . corrected section 4.4 . f release december 2006 -11 co rrected bottom picture in figure 4-1 . e release october 2006 -11 updated the +/- signs on the x axis in the die specification ( chapter 5.0 ) and added notes to clarif y the bonding requirements. typical eye diagrams unfiltered eye diagram for 2.125 gbps @ -26.5 dbm unfiltered eye diagram for 2.5 gbps @ -26 dbm pin configuration die size 1090 x 880 m mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9 10 11 12 v cc dout doutgnd
02015-DSH-001-G mindspeed technologies ? 1 mindspeed proprietary and confidential 1.0 product specification 1.1 absolute maximum ratings these are the absolute maximum ratings at or beyond which the ic can be expected to fail or be damaged. reliable operation at these extremes for any length of time is not implied. 1.2 recommended operating conditions table 1-1. absolute maximum ratings symbol parameter rating units v cc power supply (v cc - gnd) -0.4 to +4.0 v t stg storage temperature -65 to +150 c i in pina input current 8.0 (1, 2) ma pp v pina, v agc maximum input voltage at pina and agc -0.4 to +2.0 (2) v i pink maximum average current sourced out of pink 10.0 ma v pink , v mon maximum input voltage at pink and mon -0.4 to vcc +0.4 v i dout maximum average current sourced out of dout and doutb 10.0 (3) ma v dout maximum input voltage at d out and doutb 0.0 to +2.0 (3) v notes: 1. equivalent to 4.9 ma average current. 2. do not exceed either the i in or v pina rating. pina damage will result in performa nce degradation which is difficult to detect. 3. do not exceed either the i dout or v dout rating. output device damage could occur. table 1-2. recommended operating conditions symbol parameter rating units v cc power supply (v cc -gnd) 3.3 10% v c pd max. photodiode capacitance (v r = 1.8v), for 2.125 gbps and 2.5 gbps data rate 0.5 pf t a operating ambient temperature -40 to +95 c
product specification 02015-DSH-001-G mindspeed technologies ? 2 mindspeed proprietary and confidential 1.3 dc characteristics 1.4 ac characteristics table 1-3. dc characteristics symbol parameter min. typ. max. units v b photodiode bias voltage (pink - pina) 1.7 2.0 2.2 v v cm common mode output voltage 0.7 1 1.3 v i cc supply current (no loads) 24 32 40 ma r load recommended differential output loading 85 100 (1) ? ? notes: 1. 100 ? is the load presented by the limiting amplifier. table 1-4. ac characteristics symbol parameter condition min. typ. (1) max. units r out output impedance (single ended) ? 30 50 70 ? lfc low frequency cutoff (3) ??3550khz v d differential output voltage 100 ? differential load ? 250 425 mv dcd duty cycle distortion 2.125 gbps ? ? 50 ps 2.5 gbps ? ? 60 dj deterministic jitter (includes dcd) 2.125 gbps, 2 7 - 1 prbs ? ? 60 ps pp 2.5 gbps, 2 23 - 1 prbs ? ? 70 pdj pattern dependant jitter (at crossing point) with no dcd 2.125 gbps, 2 7 - 1 prbs ? ? 29 ps pp 2.5 gbps, 2 23 - 1 prbs ? ? 34 in_rms total input rms noise dc to 1.59 ghz (bessel filter), cin = 0.5 pf ? 280 ? na dc to 1.87 ghz (bessel filter), cin = 0.5 pf ? 290 360 pin_mean_min minimum input optical sensitivity (2) 2.125 gbps, ber < 10 -10 ? -26.2 ? dbm 2.125 gbps, ber < 10 -12 ? -25.7 ? 2.5 gbps, ber < 10 -10 ? -26.0 ? imon_off monitor output offset ? ? 4 a imon_error monitor output accuracy (4) v mon = 0 to 2v ? ? 1.75 db notes: 1. die designed to operate over an ambient temperature range of -40c to +95c, t a and v cc range from 3.0 - 3.6v. typi cal values are tested at t a = 25 c and v cc =3.3v. 2. at stated data rate and ber. pd capacitance = 0.5 pf, responsivity = 0.9 a/w, extinction ratio = 10, temp = 25c. 3. -26 dbm, extinction ratio = 10, temp = 25c. 4. after offset removed.
product specification 02015-DSH-001-G mindspeed technologies ? 3 mindspeed proprietary and confidential 1.5 dynamic characteristics 1.6 typical performance v cc = 3.3v, temperature = 25c, l in = 1 nh, unless otherwise stated. table 1-5. dynamic characteristics symbol parameter min. typ. max. units g transimpedance - single ended - differential 2.5 5 4.5 9 5.75 11.5 k ? bw bandwidth to -3 db point @ -26 dbm, 0.9 a/w, 0.5 pf pd 1400 1800 ? mhz rc agc loop time constant ? 2 ? s i agc agc threshold ? 32 ? a pp i ovl input overload current 3.3 (1) ??ma pp psrr power supply rejection, f < 1 mhz 20 27 ? db notes: 1. to meet ac specifications, equivalent to +3 dbm input optical power at extinction ratio = 10, responsivity = 1.0 a/w. figure 1-1. typical performance diagrams 1 of 5 typical transimpedance vs . peak-to-peak input current 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 10000 peak-to-peak input current ( a) transimpedance (k ? )
product specification 02015-DSH-001-G mindspeed technologies ? 4 mindspeed proprietary and confidential v cc = 3.3v, temperature = 25c, l in = 1 nh, unless otherwise stated. figure 1-2. typical performance diagrams 2 of 5 typical transimpedance vs . average input power (extinction ratio = 13db) 0.1 1 10 -30 -25 -20 -15 -10 -5 0 average input power (dbm) transimpedance (k ? ) typical transimpedance vs . v agc 0 1 2 3 4 5 6 7 8 9 10 00.511.52 v agc (v) transimpedance (k ? )
product specification 02015-DSH-001-G mindspeed technologies ? 5 mindspeed proprietary and confidential v cc = 3.3v, temperature = 25c, l in = 1 nh, unless otherwise stated. figure 1-3. typical performance diagrams 3 of 5 typical imon current vs. input current with ac signal applied 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 average input current ( a) imon current ( a) typical imon error vs. input power with ac signal applied (after offset calibration ) -1.5 -1 -0.5 0 0.5 1 1.5 -30-25-20-15-10 -5 0 average input power (dbm) imon error (db)
product specification 02015-DSH-001-G mindspeed technologies ? 6 mindspeed proprietary and confidential v cc = 3.3v, temperature = 25c, l in = 1 nh, unless otherwise stated. figure 1-4. typical performance diagrams 4 of 5 m02015 bandwidth vs . input capacitance 3.3v, nom, l in = 1nh 1 1. 2 1. 4 1. 6 1. 8 2 2. 2 2. 4 0.2 0.4 0.6 0.8 1 cin (pf) bandwidth (ghz) t = -40oc t = 0oc t = 27oc t = 85oc t = 110oc m02015 bandwidth vs . temperature 3.3v, nom, l in = 1nh 1 1. 2 1. 4 1. 6 1. 8 2 2. 2 2. 4 -4010 60110 junction temperature (oc) bandwidth (ghz) cin = 0.3pf cin = 0.5pf cin = 0.75pf cin = 1.0pf
product specification 02015-DSH-001-G mindspeed technologies ? 7 mindspeed proprietary and confidential v cc = 3.3v, temperature = 25c, l in = 1 nh, unless otherwise stated. figure 1-5. typical performance diagrams 5 of 5 m02015 jitter characteristics vs . i in 3.3v, nom, l in = 1 nh, c in = 0.5 pf, 2.125 gbps -20 -15 -10 -5 0 5 10 15 20 25 1 10 100 1000 10000 input current ( a pp ) jitter (ps) pdj ps pp dcd ps dj ps pp (note : dj = pdj + |dcd|)
02015-DSH-001-G mindspeed technologies ? 8 mindspeed proprietary and confidential 2.0 pad definitions table 2-1. pad description die pad no name function 1 agc monitor or force agc voltage 2v cc power pin. connect to most positive supply 3 pink common pin input. connect to photo diode cathode and a 470 pf capacitor to gnd (1) 4 pina active pin input. connect to photo diode anode 5v cc power pin. connect to most positive supply (only one v cc pad needs to be connected) 6 mon analog current source output. current matched to average photodiode current 7 dout differential data outp ut (goes low as light increases) 8dout gnd ground return for dout pad (2) 9 gnd ground pin. connect to the most negative supply (2) 10 gnd ground pin. connect to the most negative supply (2) 11 doutgnd ground return for dout pad (2) 12 dout differential data outp ut (goes high as light increases) na backside backside. connect to the lowest potential, usually ground notes: 1. alternatively the photodiode cathode may be conn ected to a decoupled positive supply, e.g. v cc . 2. all ground pads are common on the die. only one ground pad needs to be connected to the to-can ground. however, connecting mo re than one ground pad to the to-can ground, particularly those across the di e from each other can improve performance in noisy environment s. figure 2-1. bare die layout mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9 10 11 12 v cc dout doutgnd
02015-DSH-001-G mindspeed technologies ? 9 mindspeed proprietary and confidential 3.0 functional description 3.1 overview the m02015 is a cmos transimpedance amplifier with agc. the agc gives a wide dynamic range of 32 db. the high transimpedance gain of 9.0 k ? ensures good sensitivity. for optimum system performance, the m02015 die should be mounted with a gaas or ingaas pin photodetector inside a lensed to-can or other optical sub-assembly. the m02015 can either bias the pin diode from the internal regulator or use an externally biased pin diode. a replica of the average photodiode current is available at the mon pad for photo-alignment and receive power monitoring (sff-8472 compliant). figure 3-1. m02015 block diagram dc restore phase splitter agc pina pink mon dout dout 2.6 v 1 v dc shift
functional description 02015-DSH-001-G mindspeed technologies ? 10 mindspeed proprietary and confidential 3.2 general description 3.2.1 tia (transimpedance amplifier) the transimpedance amplifier consists of a high gain single-ended cmos amplifier (tia) with a feedback resistor. the feedback creates a virtual ground low impedance at the input and virtually all of the input current passes through the feedback resistor defining the voltage at th e output. advanced cmos design techniques are employed to maintain the stability of this stage across all input conditions. an on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to several mhz. higher frequency power supply noise is removed by the external 470 pf decoupling capacitor connected to pink. the circuit is designed for pin photodiodes in the ?grounded cathode? configuration, with the anode connected to the input of the tia and the cathode connected to ac ground, such as the provided pink terminal. reverse dc bias is applied to reduce the photodiode capacitance. avalanche photodiodes can be connected externally to a higher voltage. 3.2.2 agc the m02015 has been designed to operate over the input range of +6 dbm to -26 dbm. this represents a ratio of 1:1500 whereas the acceptable dynamic range of the output is only 1:30 which implies a compression of 50:1 in the transimpedance. the design uses a mos transistor operating in the triode region as a ?voltage controlled resistor? to achieve the transimpedance variation. another feature of the agc is that it only operates on signals greater than ?17 dbm (@0.9 a/w). this knee in the gain response is important when setting ?signal detect? functions in the following post amplifier. it also aids in active photodiode alignment. the agc pad allows the agc to be disabled during photodiode alignment by grounding the pad through a low impedance. the agc control voltage can be monitored during normal operation at this pad by a high impedance (>10 m ? ) circuit. 3.2.3 output stage the signal from the tia enters a phase splitter followed by a dc-shift stage and a pair of voltage follower outputs. these are designed to drive a differential (100 ? ) load. they are stable for driving capacitive loads such as interstage filters. each output has its own gnd pad; all four gnd pads on the chip should be connected for proper operation. since the m02015 exhibits rapid roll-off (3 pole), simple external filtering is sufficient. 3.2.4 monitor o/p high impedance output sources a replica average photodiode current for monitoring purposes. this output is compatible with the ddmi receive power specification (sfp-8472) and mindspeed?s range of ddmi controllers. ensure that the voltage on v mon is in the range of 0 to 2v. refer to figure 4-1 .
02015-DSH-001-G mindspeed technologies ? 11 mindspeed proprietary and confidential 4.0 applications information 4.1 recommended pin diode connections figure 4-1. suggested pin diode connection methods note: selection of rm depends on the maximum input current as detailed in ta bl e 4 - 1 . recommended circuit tia bond pad to can lead pina dout doutb v cc pink 1 nf m02015 470 pf rm mon v cc gnd alternative circuit: external pd/apd bias pina dout doutb v cc pink 1 nf 500 ? 470 pf m02015 pdc_bias 470 pf v cc pdc rm mon gnd tia bond pad to can lead
applications information 02015-DSH-001-G mindspeed technologies ? 12 mindspeed proprietary and confidential 4.2 selecting the monitor resistor as described earlier the high impedance monitor output sources a replica average photodiode current for monitoring purposes. if detected by converting the current to a voltage through an external resistor ( figure 4-1 ), ensure that the voltage on v mon is in the range of 0 to 2v. the table below provides suggested values for the monitor resistor. 4.3 to-can layout table 4-1. selection of rm for maximum input current i in max (ma) optical power (dbm) rm ( ? ) 4 +6 500 2 +3 1000 1 0 2000 0.5 -3 4000 figure 4-2. typical layout diagram with photodiode mounted on pink capacitor (5 pin to-can) notes: typical application inside of a 5 lead to-can. only one of the v cc pads and one of the gnd pads need to be connected (though in noisy environments two or more gnd pads connected may improve performance). the backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die atta ch material. if a monitor output is not required then a 4 lead to-can may be used. mon pin a pink v cc agc do ut gnd gnd dout gnd v cc dout dout gnd v cc mon dout doutb 1nf 470pf
applications information 02015-DSH-001-G mindspeed technologies ? 13 mindspeed proprietary and confidential 4.4 treatment of pink pink requires bypassing to ground with a 470 pf capacitor when powering a photo diode. if pink is not used to bias the photo diode, then it is not necessary to bypass an unused pink. figure 4-3. typical layout diagram with photod iode mounted on to-can base (5 pin to-can) notes: typical application inside of a 5 lead to-can. only one of the v cc pads and one of the gnd pads need to be connected (though in noisy environments two or more gnd pads connected may improve performance). the backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die atta ch material. if a monitor output is not required then a 4 lead to-can may be used. mon pina pink v cc agc do ut gnd gnd dout gnd v cc dout dout gnd v cc mon dout doutb 1nf 470pf
applications information 02015-DSH-001-G mindspeed technologies ? 14 mindspeed proprietary and confidential 4.5 t0-can assembly recommendations 4.5.1 assembly the m02015 is designed to work with a wirebond inductance of 1 nh 0.25 nh. many existing to-can configurations will not allow wirebond lengths that short, since the pin di ode submount a nd the tia di e are more than 1 mm away in the vertical direction, due to the need to have the pin diode in the correct focal plane. this can be remedied by raising up the tia di e with a conductive metal shim. this will effectively reduce the bond wire length. refer to figure 4-4 above for details. figure 4-4. to-can assembly diagram m02015 ceramic shim submount to can leads pin diode to-can header ceramic shim submount to can leads to-can header not recommended example recommended example metal shim @4 or 5 m02015 pin diode @4 or 5 this bond is too long and unreliable this bond is unreliable
applications information 02015-DSH-001-G mindspeed technologies ? 15 mindspeed proprietary and confidential mindspeed recommends ball bonding with a 1 mil (25.4 m) gold wire. for performance reasons the pina pad is smaller than the others and also has less via material connected to it. it therefore requires more care in setting of the bonding parameters. for the same reason pina has no esd protection. in addition, please refer to the mindspeed product bulletin (document number 0201x-pbd-002). care must be taken when selecting chip capacitors, since they must have good low esr characteristics up to 1.0 ghz. it is also important that the termination materials of the capacitor be compatible with the attach method used. for example, tin/lead (pb/sn) solder finish capacitors are incompatible with silver-filled epoxies. palladium/silver (pd/ag) terminations are compat ible with silver filled epoxies. solder can be used only if the substrate thick-film inks are compatible with pb/sn solders. 4.5.2 recommended assembly procedures for esd protection the following steps are recommended for to-can assembly: a. ensure good humidity control in the environment (to help minimize esd). b. consider using additional ionization of the air (also helps minimize esd). c. as a minimum, it is best to ensure that the body of the to-can header or the ground lead of the header is grounded through the wire-bonding fixture for the following steps. the best solution also ensures that the v cc lead of the to-can is also grounded. when this is done and the procedure below is followed, any positive charge on the wire bonder when bonding to pina (the very last bond placed) will have the pd acting as an esd dio de into pink of the device. internally, pink has an esd diode between it and vcc that will turn on if v cc is at ground minimizing the esd event at pina. d. the wire bonder (including the spool, clamp, etc.) must also be grounded. 1. wire-bond the ground pad(s) of the die first. 2. then wire bond the v cc pad to the to-can lead. 3. then wire bond any other pads going to the to -can leads (such as dout, dout and possibly mon). 4. next wire-bond any capacitors inside the to-can. 5. inside the to-can, wire bond pink. 6. the final step is to wire bond pina.
applications information 02015-DSH-001-G mindspeed technologies ? 16 mindspeed proprietary and confidential 4.6 tia use with externally biased detectors in some applications, mindspeed tias are used with detectors biased at a voltage greater than available from tia pin cathode supply. this works well if some basic cautions are observed. when turned off, the input to the tia exhibits the following i/v characteristic: in the positive direction the impedance of the input is relatively high. figure 4-5. tia use with externally biased detectors, powered off pina unbiased -300 -250 -200 -150 -100 -50 0 50 100 -800 -600 -400 -200 0 200 400 600 800 1000 1200 mv a
applications information 02015-DSH-001-G mindspeed technologies ? 17 mindspeed proprietary and confidential after the tia is turned on, the dc servo and agc circuits attempt to null any input currents (up to the absolute maximum stated in ta bl e 1 - 1 ) as shown by the i/v curve in figure 4-6 . it can be seen that any negative voltage below 200 mv is nulled and that any positive going voltage above the pina standing voltage is nulled by the dc servo. the dc servo upper bandwidth varies from part to part, but is generally at least 30 khz. when externally biasing a detector such as an apd where the supply voltage of the apd exceeds that for pina ta bl e 1 - 1 , care should be taken to power up the tia first and to keep the tia powered up until after the power supply voltage of the apd is removed. failure to do this with the tia unpowered may result in damage to the input fet gate at pina. in some cases the damage may be very subtle, in that nearly normal operation may be experienced with the damage causing slight reductions in bandwidth and corresponding reductions in input sensitivity. figure 4-6. tia use with externally biased detectors, powered on pina biased -1000 -800 -600 -400 -200 0 200 400 600 800 1000 -300 -200 -100 0 100 200 300 400 500 600 700 mv a
02015-DSH-001-G mindspeed technologies ? 18 mindspeed proprietary and confidential 5.0 die specification figure 5-1. bare die layout mon pina pink v cc agc dout gnd gnd doutgnd 1 2 3 4 56 7 8 9b 10b 11 12 v cc dout doutgnd 9a 9c 10a 10a pad number pad x y 1 agc -329 -76 2 (1) v cc -329 -228 3 pink -124 -434 4 pina 124 -434 5 (1) v cc 329 -228 6mon 329 -76 7dout 329 76 8 (1) dout gnd 329 228 9c (1, 2) gnd 329 360 9b (1, 2) gnd 255 434 9a (1, 2) gnd 124 434 10a (1, 2) gnd -124 434 10b (1, 2) gnd -255 434 10c (1, 2) gnd -329 360 11 (1) doutgnd -329 228 12 dout -329 76 notes: 1. it is only necessary to bond one v cc pad and one gnd pad. however, bonding one of each pad (if available) on each side of the die is encouraged for improved performance in noisy environ- ments. 2. each location is an ac ceptable bonding location. notes: process technology: cmos, silicon nitride passivation die thickness: 300 m pad metallization: aluminium die size: 880 m x 1090 pad opening (except pina): 86 m across flat sides pina pad: 70 m across flat sides (70 m x 70 m) pad centers in m referenced to center of device connect backside bias to ground
www.mindspeed.com general information: telephone: (949) 579-3000 headquarters - newport beach 4000 macarthur blvd., east tower newport beach, ca 92660 ? 2006-2007 mindspeed technologies ? , inc. all rights reserved. information in this document is provided in connection with mindspeed technologies ? ("mindspeed ? ") products. these materials are provided by mindspeed as a service to its customers and may be used for informational purposes only. except as provided in mindspeed?s terms and conditions of sale for such products or in any separate agreement related to this document, mindspeed assumes no liability whatsoever. mindspeed assumes no responsibility for errors or omission s in these materials. mindspeed may make changes to specifications and product descriptions at any time, without notice. mindspeed makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incom patibilities arising from future changes to its specifications and product descriptions. no license, ex press or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" withou t warranty of any kind, either express or implied, relating to sale and/or use of mindspeed products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. mindspeed further does not warrant the accuracy or completeness of the information, text, graph ics or other items contained within these materials. mindspeed shall not be liable fo r any special, indirect, incidental, or consequential damages, including without li mitation, lost revenues or lost profits, which may result from the use of these materials. mindspeed products are not intended for use in medical, lifesaving or life sustaining applications. mindspeed customers using or selling mindspeed pr oducts for use in such applications do so at their own risk and agree to fully indemnify mindspeed for any damages resulting from such improper use or sale. 02015-DSH-001-G mindspeed technologies ? 19 mindspeed proprietary and confidential

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